inchange semiconductor isc rf product specification isc website www.iscsemi.cn 1 isc silicon npn rf transistor MMBR941L description low noise high current-gain bandwidth product applications designed for use in high gain , low noise small-signal amplifiers. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 20 v v ceo collector-emitter voltage 10 v v ebo emitter-base voltage 1.5 v i c collector current-continuous 50 ma p c collector power dissipation @t c = 75 0.25 w t j junction temperature 150 t stg storage temperature range -55~150
inchange semiconductor isc rf product specification isc website www.iscsemi.cn 2 isc silicon npn rf transistor MMBR941L electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 0.1ma ; i b = 0 10 v v (br)cbo collector-base breakdown voltage i c = 0.1ma ; i e = 0 20 v i ebo emitter cutoff current v eb = 1v; i c = 0 0.1 a i cbo collector cutoff current v cb = 10v; i e = 0 0.1 a h fe dc current gain i c = 5ma ; v ce = 6v 50 200 c ob output capacitance i e = 0 ; v cb = 10v; f= 1mhz 0.35 pf f t current-gain?bandwidth product i c = 15ma ; v ce = 6v; f= 1ghz 8 ghz s 21e 2 insertion power gain i c = 15ma ; v ce = 6v;f= 1.0ghz 14 db s 21e 2 insertion power gain i c = 15ma ; v ce = 6v;f= 2.0ghz 8.0 db gu max maximum unilateral gain i c = 15ma ; v ce = 6v;f= 1.0ghz 16 db gu max maximum unilateral gain i c = 15ma ; v ce = 6v;f= 2.0ghz 10 db nf noise figure i c = 5ma ; v ce = 6v; f= 1ghz; r g = 50 1.9 2.8 db
inchange semiconductor isc rf product specification 3 isc website www.iscsemi.cn isc silicon npn rf transistor MMBR941L
inchange semiconductor isc rf product specification isc website www.iscsemi.cn 4 isc silicon npn rf transistor MMBR941L s-parameter v ce = 1 v, i c = 0.5 ma f (mhz) s 11 s 11 s 21 s 21 s 12 s 12 s 22 s 22 100 0.97 ?11 1.78 170 0.03 83 0.99 ?4.7 200 0.96 ?22 1.74 161 0.06 76 0.99 ?9.1 500 0.90 ?53 1.60 133 0.13 56 0.93 ?21 900 0.75 ?89 1.37 105 0.18 37 0.83 ?33 1000 0.72 ?98 1.32 100 0.18 33 0.82 ?36 1500 0.63 ?132 1.07 74 0.19 20 0.75 ?47 2000 0.57 ?163 0.89 55 0.16 15 0.72 ?57 3000 0.55 ?144 0.67 30 0.15 40 0.71 ?76
inchange semiconductor isc rf product specification 5 isc website www.iscsemi.cn isc silicon npn rf transistor MMBR941L v ce = 1 v, i c = 1 ma f (mhz) s 11 s 11 s 21 s 21 s 12 s 12 s 22 s 22 100 0.95 ?13 3.37 169 0.03 81 0.99 ?6.2 200 0.93 ?27 3.27 158 0.06 73 0.98 ?12 500 0.81 ?62 2.85 128 0.12 52 0.86 ? 26 900 0.63 ?101 2.21 101 0.15 37 0.73 ?38 1000 0.60 ?110 2.08 96 0.15 34 0.71 ?40 1500 0.51 ?144 1.59 73 0.16 27 0.64 ?49 2000 0.46 ?173 1.28 56 0.16 29 0.61 ?58 3000 0.46 ?138 0.95 30 0.19 44 0.60 ?75 v ce = 6 v, i c = 5 ma f (mhz) s 11 s 11 s 21 s 21 s 12 s 12 s 22 s 22 100 0.82 ?25 14.6 159 0.02 77 0.94 ?13 200 0.75 ?47 12.6 142 0.04 68 0.85 ?22 400 0.55 ?79 9.2 120 0.05 61 0.69 ?31 600 0.42 ?98 6.9 106 0.07 60 0.60 ?32 800 0.33 ?114 5.3 97 0.08 61 0.56 ?33 1000 0.28 ?129 4.5 90 0.09 62 0.52 ?33 1500 0.25 ?155 3.1 77 0.13 67 0.51 ?37 2000 0.16 176 2.4 66 0.16 68 0.51 ?36 2500 0.21 151 2.0 57 0.20 69 0.48 ?40 3000 0.18 122 1.7 50 0.23 68 0.48 ?44 3500 0.30 108 1.5 42 0.27 66 0.45 ?46 400 0.29 91 1.4 37 0.32 64 0.42 ?53
inchange semiconductor isc rf product specification isc website www.iscsemi.cn 6 isc silicon npn rf transistor MMBR941L v ce = 6 v, i c = 10 ma f (mhz) s 11 s 11 s 21 s 21 s 12 s 12 s 22 s 22 100 0.67 ?37 23.5 149 0.02 74 0.88 ?18 200 0.54 ?64 18.1 129 0.03 68 0.73 ?28 400 0.37 ?96 11.3 108 0.05 67 0.56 ?31 600 0.26 ?114 8.0 98 0.06 67 0.50 ?30 800 0.21 ?130 6.0 91 0.08 70 0.47 ?30 1000 0.18 ?147 5.1 85 0.09 70 0.45 ?30 1500 0.18 ?167 3.4 74 0.13 72 0.46 ?34 2000 0.11 159 2.6 64 0.17 71 0.46 ?34 2500 0.17 140 2.2 56 0.21 69 0.44 ?38 3000 0.15 107 1.8 59 0.25 67 0.45 ?41 3500 0.27 100 1.7 42 0.28 65 0.42 ?42 4000 0.26 85 1.5 37 0.33 61 0.39 ?49 v ce = 6 v, i c = 15 ma f (mhz) s 11 s 11 s 21 s 21 s 12 s 12 s 22 s 22 100 0.56 ?46 28.6 143 0.02 73 0.83 ?22 200 0.43 ?75 20.2 122 0.03 67 0.65 ?30 400 0.29 ?107 11.8 104 0.04 70 0.50 ?30 600 0.22 ?125 8.2 95 0.06 74 0.46 ?28 800 0.18 ?141 6.2 88 0.08 74 0.45 ?27 1000 0.16 ?158 5.1 83 0.09 74 0.43 ?28 1500 0.17 ?174 3.4 72 0.13 73 0.44 ?32 2000 0.11 150 2.6 63 0.17 72 0.45 ?33 2500 0.17 138 2.2 55 0.21 70 0.43 ?37 3000 0.15 102 1.9 49 0.25 67 0.44 ?39 3500 0.28 98 1.7 42 0.29 65 0.40 ?41 4000 0.25 82 1.5 37 0.32 61 0.38 ?47
inchange semiconductor isc rf product specification 7 isc website www.iscsemi.cn isc silicon npn rf transistor MMBR941L v ce = 6 v, i c = 20 ma f (mhz) s 11 s 11 s 21 s 21 s 12 s 12 s 22 s 22 100 0.49 ?52 31.5 139 0.01 70 0.79 ?23 200 0.36 ?84 21.1 118 0.02 69 0.60 ?29 400 0.25 ?115 12.1 101 0.04 73 0.48 ?29 600 0.20 ?134 8.3 93 0.06 74 0.45 ?26 800 0.16 ?150 6.2 87 0.07 75 0.44 ?26 1000 0.15 ?166 5.1 82 0.09 75 0.42 ?26 1500 0.16 ?176 3.5 75 0.14 74 0.44 ?31 2000 0.12 144 2.6 63 0.17 73 0.45 ?32 2500 0.17 133 2.2 55 0.22 70 0.43 ?36 3000 0.16 101 1.9 49 0.25 68 0.44 ?39 3500 0.28 98 1.6 41 0.29 65 0.41 ?40 4000 0.26 82 1.5 36 0.33 61 0.39 ?47 v ce = 6 v, i c = 30 ma f (mhz) s 11 s 11 s 21 s 21 s 12 s 12 s 22 s 22 100 0.41 ?65 34.3 134 0.01 70 0.74 ?25 200 0.30 ?99 21.6 113 0.02 70 0.56 ?28 400 0.23 ?131 11.9 98 0.04 76 0.47 ?25 600 0.20 ?147 8.1 91 0.06 76 0.45 ?24 800 0.18 ?163 6.1 84 0.07 78 0.44 ?23 1000 0.17 ?177 5.0 80 0.09 78 0.43 ?24 1500 0.18 174 3.4 70 0.13 76 0.45 ?30 2000 0.14 141 2.5 61 0.17 74 0.47 ?31 2500 0.20 131 2.1 54 0.21 71 0.45 ?36 3000 0.18 104 1.8 47 0.25 69 0.46 ?39 3500 0.31 100 1.6 40 0.29 65 0.42 ?42 4000 0.29 84 1.5 35 0.33 62 0.40 ?48
inchange semiconductor isc rf product specification isc website www.iscsemi.cn 8 isc silicon npn rf transistor MMBR941L
inchange semiconductor isc rf product specification 9 isc website www.iscsemi.cn isc silicon npn rf transistor MMBR941L
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